u , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 buz 10 l sipmos ? power transistor ? n channel ? enhancement mode ? avalanche-rated ? logic level type buz 10 l vds 50v id 23 a rds(on) 0.07 q. package to-220 ab maximum ratings pin1 g pin 2 d pin 3 s parameter continuous drain current 7c = 26 c pulsed drain current tc = 25 c avalanche currentjimited by 7]max avalanche energy,periodic limited by tjmax avalanche energy, single pulse /d = 23 a, vdd = 25 v, rgs = 25 0 /.= 15.1 uh, 7] = 25c gate source voltage gate-source peak voltage, aperiodic power dissipation rc = 25 c operating temperature storage temperature thermal resistance, chip case thermal resistance, chip to ambient din humidity category, din 40 040 iec climatic category, din iec 68-1 symbol id /dpuls /ar ar as vgs ^gs ^tot tl tstg ^thjc ^thja values 23 92 23 1.3 8 14 20 75 -55... + 150 -55... + 150 <1.67 <75 e 55/150/56 unit a mj v w c k/w
buz 10 l electrical characteristics, at 7i = 25c, unless otherwise specified parameter symbol values min. typ. max. unit static characteristics drain- source breakdown voltage vgs = 0 v, /d = 0.25 ma, 7] = 25 c gate threshold voltage ^gs=vds, /d= 1 ma zero gate voltage drain current vds = 50 v, vgs = 0 v, 7] = 25 c l/ds = 50v, vgs = ov,7j = 1250c gate-source leakage current \/gs = 20 v, vbs = 0 v drain-source on-resistance vgs = 5v, /d=11.5a ^(br)dss ^gs(th) /dss igss rds(or\) 50 1.2 - - - - - 1.6 0.1 10 10 0.06 - 2 1 100 100 0.07 v ma na q
buz 10l electrical characteristics, at 7] = 25c, unless otherwise specified parameter symbol values min. typ. max. unit dynamic characteristics transconductance vds^ 2 * /d * /?ds(on)max, /d = 1 1 -5 a input capacitance vgs = 0 v, vds = 25 v, f= 1 mhz output capacitance vgs = 0 v- ^bs = 25 v- f= 1 mhz reverse transfer capacitance vgs = 0 v, vds = 25 v, f= 1 mhz turn-on delay time vdd = 30 v, vgs = 5 v, /o = 3 a rgs = 50 a rise time vdd = 30 v, vgs = 5 v, /d = 3 a rgs = 50 0 turn-off delay time vdd = 30 v, vgs = 5 v, /d = 3 a rgs = 5q& fall time vdd = 30 v, vgs = 5 v, /d = 3 a rgs = 50 q flfe qss ^oss qss ^d(on) fr fd(off) ^ 8 - - - - - - - 14.5 800 300 110 25 75 110 75 - 1100 450 170 40 120 160 95 s pf ns
buz 10 l electrical characteristics, at 7] = 25c, unless otherwise specified parameter symbol values min. typ. max. unit reverse diode inverse diode continuous forward current 7c = 25 c inverse diode direct current.pulsed 7c = 25 c inverse diode forward voltage vgs = 0 v, /f = 46 a reverse recovery time vr = 30 v, /f=/s, dip/dt = 1 00 a/us reverse recovery charge vr = 30 v, /f=/si d/f/df = 1 00 a/us 's ism vsd tfr qrr - - - - - - - 1.5 60 0.1 23 92 1.9 - - a v ns uc
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